A new source-side erase algorithm to reduce disturb problem in flash EPROM

A two-step erase algorithm for a Flash EPROM, consisting of a source-side erase and a subsequent source-side soft channel hot-electron injection, will be described. The second step is designed to neutralize the GIDL-induced trapped holes during the first step. Experimental results show that the two-step algorithm greatly reduces the word-line disturb problem and achieves threshold voltage convergence.