Mobility and reliability improvements of fluorinated gate oxide for VLSI technology

By incorporating appropriate quantities of fluorine into the gate SiO/sub 2/, we achieved improvement in channel mobility as well as transconductance of both nand p-channel submicron LDD MOSFETs for gate fields from 0.7 to 3 MV/cm, and increased their lifetimes based on hot-carrier stress tests. Possible mechanisms are briefly discussed.