The electrical characteristics of bulk unipolar camel diodes in pre-amorphized silicon

Barrier heights derived from the measured forward I-V characteristics are consistent with barrier heights calculated using doping profiles determined by secondary ion mass spectroscopy (SIMS). Reverse-bias I-V characteristics show excessive barrier pull-down, which is explained by the presence of excess donors at the original amorphous-single-crystal interface. The existence of these donors has been confirmed by C-V profiling. A reduction in excess donor density by plasma hydrogenation has led to a corresponding reduction in the reverse-bias barrier pull-down. These camel diodes have reverse-bias characteristics superior to those of diodes fabricated in single-crystal silicon.<
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