Band discontinuities: a simple electrochemical approach

A simple but general analytic description of the band discontinuities at a semiconductor heterojunction is derived from the fundamental electrochemical principle. The effects of nonuniform band structure and carrier degeneracy (Fermi-Dirac statistics), dielectric image forces, quantum-mechanical exchange-correlation forces, and dipole forces across the interface are included. These nonideal effects (band model parameters) are expressed in terms of the activity coefficients (thermodynamic parameters) of the carriers. A simple but general correlation between the energy band discontinuities and the activity coefficients of the carriers is found. Such a mathematical link between the two quantities shows that the thermodynamic parameters are important to the physics that determines the band discontinuities.<
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