Direct Measurements of Self-Sputtering, Swelling, and Deposition Effects of N-Type Low-Energy Ion Implantations

Angle-resolved X-ray photoelectron spectroscopy method was used to study self-sputtering effects of different n-type low-energy doping techniques, including conventional monoatomic
⁷⁵
As and
³¹
P beam-line ion implants and AsH
₃
plasma doping (PLAD). It has been found that the self-sputtering effects of the beam-line implants correlate with the mass of ion species. As beam-line implant shows more serious self-sputtering effect than monoatomic P and B beam-line implants. Very low energy P implants show surface-swelling phenomena. PLAD process using AsH
₃
gas species has no sputtering effects but has slight deposition under current process condition.