Thermal Stability of Poly-Si Phototransistors Incorporating Ge Quantum Dots for Near-Ultraviolet Light Detection and Amplification

We investigated temperature-dependent ( 300 K - 120 K ) subthreshold characteristics and transient photoresponses of poly-Si phototransistors (PTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide for near-ultraviolet light detection and amplification. Incorporating Ge QDs into the poly-Si PT structure improves the device thermal stability in the subthreshold characteristics and transient photoresponse, due to better light absorption efficiency and photovoltaic effect suppression.