Photoluminescence of La-O+-Codoped Silicon-Based Thin-Film Materials

The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by La % O
⁺
by ion double implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to different ion implanting sequence of La and O
⁺
and to the temperature of thermal annealing.