Over-temperature noise modeling of PHEMTs

A new procedure is presented for modeling the variations with temperature of the noise source coefficients related to the gate and the drain of a field effect transistor (FET). The experimental results obtained for a temperature range over -60/spl deg/C to 140/spl deg/C are compared to two recent similar studies, using a pseudomorphic HEMT. It is demonstrated that good agreement can be obtained for some of the temperature coefficients for both the small signal model and the internal noise sources.