The growth behavior of Pb-containing perovskite thin films using pulsed laser deposition technique

The PLZT films highly textured in (110) orientation have been successfully grown on SrTiO/sub 3/-buffered silicon substrates. The films deposited by pulsed laser deposition are assumed to be formed via a two-step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of the amorphous to perovskite phase transformation. Thereby, the loss of Pb-species in the films is thus suppressed. The optimum dielectric constants obtained are around /sub /spl epsi/r/=490 for PLZT/STO/Si films deposited at 550/spl deg/C (1 mbar Po/sub 2/) and post-annealed at 550/spl deg/C (1 atm Po/sub 2/). Furthermore, the corresponding charge storage density is around Q/sub c//spl ap/1.5 /spl mu/c/cm/sup 2/, at 50 KV/cm applied field strength.