Improvement of resistivity of phosphorous nitride films deposited at 100/spl deg/C on InP substrate

Phosphorous nitride (PN) films were deposited on InP as gate-insulator films at 100/spl deg/C by photon-assisted chemical vapor deposition (PACVD) method using PCl/sub 3/ and NH/sub 3/ as source gasses, and their electrical and optical properties were investigated. The electrical leakage resistance of PN films was found to depend on the amount of phosphorous within PN films which was changed by the ratio of source gases (PCl/sub 3//NH/sub 3/). As a result, even at 100/spl deg/C, PN films with resistivity of about 10/sup 9/-10/sup 10/ /spl Omega//spl middot/cm under high electric field (1 MV/cm) were obtained without post deposition annealing by optimizing the source gas ratio.