InGaAsP strained MQW-DFB lasers with high resonance frequency and low distortion for high speed analog transmission

The resonance frequency has been improved by adopting a strained multiple quantum well (MQW) structure with the strain-compensated layers and optimizing its design. Moreover it has been demonstrated that our newly developed structure having current blocking layers fabricated by MOCVD is very efficient to suppress the leakage current. As a result, the third-order-intermodulation distortion (IMD3) of -80 dBc and relative intensity noise (RIN) of -152 dB/Hz have been obtained under a two-tone test at 1.9 GHz.