InGaAs insulated gate field effect transistors using silicon interlayer based passivation technique

The purpose of this paper is to investigate the applicability of the Si interface control layer (ICL) based passivation technique to construction of InGaAs insulated gate field effect transistor (IGFET) devices such as MISFETs and HEMTs. HF treatment were applied to InGaAs and InAlAs surfaces. Basic insulator-semiconductor structures were fabricated and characterized by XPS, I-V and MIS C-V techniques. Fat MISFETs and HEMTs were also fabricated and the feasibility of the present technique is successfully demonstrated.