Influence of arsenic flux ratio in the thermal cleaning process on InP (100) surface characteristics

Influence of arsenic flux ratio in the thermal cleaning process on InP (100) surface characteristics was investigated using reflected high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). We observed that the reconstruction temperature of an In-stabilized (4/spl times/2) structure and an As-stabilized (2/spl times/4) structure was dependent on the arsenic pressure. The AFM images showed that the height and number of the InAs islands on the InP surface were determined by the arsenic pressure during the thermal cleaning process.