The incorporation behavior of As and P in GaInAsP(/spl lambda//spl ap/1.3 /spl mu/m) on InP grown by gas source molecular beam epitaxy

In this report, a series of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ quaternary alloys (/spl lambda//spl ap/1.3 /spl mu/m) on (100) InP were grown by gas source MBE (GSMBE) with different gas flow rate ratios (PH/sub 3//(PH/sub 3/+AsH/sub 3/)). A simple growth model was proposed to describe the group V incorporation behavior quantitatively. Without the complicated chemical reaction parameters, the incorporation probability is controlled by the effective concentrations of the group V atoms on the migration state. Only two parameters, As to P incorporation ratio and the conversion factor between the gas flux rate and the gas flow rate, exist in this model. Furthermore, the model can be expanded to the whole range of alloy compositions by adjusting the incorporation ratio only. It is found that the incorporation ratio strongly depends on the Ga-compositions in Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ alloys.