60 GHz monolithic LNA utilizing high-speed InAlAs/InGaAs/InP HEMTs and coplanar waveguides

A monolithic two-stage low noise amplifier (LNA) on InP substrate is presented. Coplanar waveguides and lumped elements are used for the matching and biasing networks. The circuit is fully passivated and contains common ports for the gate and the drain bias. The total chip size is 2 mm/spl times/1 mm. A gain of 15 dB and an input and output matching better than -8 dB were achieved at 60 GHz.