Improving the luminescence of InGaN/GaN blue LEDs through selective ring-region ion implantation

In this study, we used the selective ring-region ion implantation technique to restrain the surface leakage current and to monitor the luminescence characteristics of InGaN/GaN multiple quantum-well blue light-emitting diodes (LEDs). The luminescence characteristics could be improved by varying the width of the highly resistive region of the current blocking area; and the leakage current also can be reduced.