Driving-signal optimization for LDMOS-SOI class E power amplifier efficiency enhancement

A class E power amplifier operating at 3.7 GHz - one of the IEEE802.16e operating frequencies - has been simulated using a LDMOS SOI BSIM3SOI model. Various driving signal waveforms were tested in order to determine which one leads to best class E performances. 87% of drain efficiency and 74% of power added efficiency (PAE) with gain of 8.3 dB was obtained providing a clipped sinus driving signal to the PA, from the best of our knowledge, this is the highest PAE obtained at this frequency using LDMOS transistor.