Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays

We investigate total ionizing dose effects on 4Mbit phase change memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the bit-line and the word-line selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.