A CMOS image sensor with 2.5-e− random noise and 110-ke− full well capacity using column source follower readout circuits

A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-µm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-µm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-µV/e
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conversion gain, 2.5-e
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random noise, 110,000-e
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full well capacity and 93-dB dynamic range in one exposure.