Effect of Airgap Deep Trench Isolation on the Gamma Radiation Behavior of a 0.13 $\mu{\hbox {m}}$ SiGe:C NPN HBT Technology

The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13 mum SiGe NPN HBT technology is studied with the help of
in-situ
measurements. The incorporation of this deep trench isolation in the technology leads to a lower degradation of the transistor during irradiation as well in forward-mode as in reverse-mode operation. A possible explanation is briefly mentioned.