Diamond Vacuum Electronic Device Behavior After High Neutron Fluence Exposure

This paper reports the first neutron exposure on diamond electronic test structures for their possible application in very high fluence neutron conditions. The behavior of diamond lateral emission diodes after high neutron fluence of 4.4times10
¹³
neutrons/cm
²
is evaluated. No noticeable changes in the device structure and electrical behavior, specifically resistivity, dilation and emission characteristics were observed.