Modeling of power reflection in microwave detected photoconductance decay [in Si solar cells]

Equivalent electrical circuits are proposed for modeling microwave power reflection in the microwave detected photoconductance decay set up for lifetime measurement during solar cell fabrication. The microwave reflectance is calculated analytically for electrically thin single and multi-layer silicon samples as a function of the sample conductivity. Expressions are derived for the optimum values of the measurement parameters leading to maximum sensitivity. Finally, a recursive reflection relation is developed for the calculation of the exact reflectance in the general case.