Use of SiO2 nanoparticles as etch mask to generate large-area GaAs nanowires by Induced-Coupled Plasma Reactive Ion Etcher

Large-area GaAs nanowires are fabricated by using SiO
2
nanoparticles as a mask. SiO
2
nanoparticle monolayer is spin-coated on the GaAs substrate and GaAs nanowires are etched by Induced-Coupled Plasma Reactive Ion Etcher.