The field emission properties of diamond films on TiSi2/Si

In this work, diamond films were grown on TiSi
₂
surface coated on Si substrate using hot-filament CVD method. It is demonstrated that at the same condition, (001) textured diamond nuclei can be formed on Si and TiSi
₂
surface, however, when diamond films was grown on Si substrate, the (100) facet has a high growth rate, while as for the case of TiSi
₂
substrate, the (111) facet of diamond grows faster than the (100) facet, so that the (111) facet of diamond will spread and (100) surfaces will decline. Field electron-emission experiment shows that the diamond films grown on TiSi
₂
own preferable emission character than that grown on Si.