Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 /spl mu/m laser diodes

The InGaAsP high power laser emitting at 808 nm with /spl eta//sub d/=1.1 W/A, J/sub th/=200 A/cm/sup 2/, and T/sub o/=155/spl deg/C have been grown by LP-MOCVD. Far field divergence of 27/spl deg/, output power of 3 W in the pulse-regime, 1.5 W in the quasi-CW-regime and 1 W in the CW-mode per uncoated facet have been obtained for 1 mm long diodes.