Ferroelectric connections for IC neural networks

The application of ferroelectric thin-film technology to the construction of electrically-alterable synapse elements for artificial neural net applications is discussed. The ferroelectric film resides above the active circuitry, allowing high density. Firstly, a binary connection scheme supporting limited connectivity but utilizing a ferroelectric characteristic which is currently used in production memory circuits is presented. Secondly, a synaptic connection element supporting continuous weight values is described.<
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