0.78-0.98 /spl mu/m ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD

Ridge-waveguide laser diodes (LD's) buried with an Al/sub 0.7/Ga/sub 0.3/As confinement layer selectively grown by using the Cl-assisted MOCVD have realized, for the first time, reduction of the operating current, stabilization of the lateral mode and the high reliability in the high-power operation.