3510-v 390-mΩ * cm2 4h-sic lateral jfet on a semi-insulating substrate

The performance of high-voltage 4H-SiC lateral JFETs on a semi-insulating substrate is reported in this letter. The design of the voltage-supporting layers is based on the charge compensation of p- and n-type epilayers. The best measured breakdown voltage is 3510 V, which, to the authors' knowledge, is the highest value ever reported for SiC lateral switching devices. The R
_on
of this device is 390 m¿·cm
²
, in which 61% is due to the drift-region resistance. The BV
²
/R
_on
is 32 MW/cm
²
, which is typical among other reported SiC lateral devices.