Successful measurements of Electron energy dependence of interface-trap-induced scattering in N-MOSFETs

The dependence of the interface-trap-induced scattering on the electron kinetic energy (epsiv
_ele
) in nMOSFETs is investigated experimentally. The procedure to extract the accurate epsiv
_ele
dependence of the interface-trap-induced scattering relationship is developed based on the careful Hall effect measurements. As a result, it is demonstrated that as epsiv
_ele
increases, the interface-trap-induced scattering is suppressed more greatly than calculated by the conventional two-dimensional Coulomb scattering model. It is also found that the epsiv
_ele
dependence of the interface-trap-induced scattering is enhanced as D
_it
increases.