Fundamental study on the impact of C co-implantation on ultra shallow B juntions

In this work, the impact of carbon co-implantation on ultra shallow boron - plasma - doping profiles has been investigated. C is used as a co-implant due to its highly effective mechanism of transient enhanced diffusion and junction depth reduction. The phenomena that lead to changes of the carrier mobility, the activation and accordingly the sheet resistance have been studied. A strong increase of sheet resistance as a result of the increased overlap between the B and C profiles was encountered. It was shown that the increasing sheet resistance was the result of mobility degradation due to increased scattering at interstitial C.