Junction technologies for devices with steep subthreshold swing

In this paper, we examine the Impact Ionization Field-Effect Transistor (I-FET or I-MOS) as well as the Tunnel Field-Effect Transistor (T-FET), paying attention to junction and material design requirements based on device physics considerations. Device performance parameters and electrical characteristics of I-MOS and T-FET devices are dependent on device structure, doping level, doping gradient, and/or material properties. Device design exploiting semiconductor heterojunctions and lattice mismatched materials for strain engineering are also discussed.