1580-V–40-$\hbox{m}\Omega\cdot \hbox{cm}^{2}$ Double-RESURF MOSFETs on 4H-SiC $(\hbox{000}\bar{\hbox{1}})$

Double-reduced-surface-field (RESURF) MOSFETs with N
₂
O-grown oxides have been fabricated on the 4H-SiC (0001macr) face. The double-RESURF structure is effective in reducing the drift resistance, as well as in increasing the breakdown voltage. In addition, by utilizing the 4H-SiC (0001macr) face, the channel mobility can be increased to over 30 cm
²
/ V ldr s, and hence, the channel resistance is decreased. As a result, the fabricated MOSFETs on 4H-SiC (0001macr) have demonstrated a high breakdown voltage (V
_B
) of 1580 V and a low on-resistance (R
_ON
) of 40 mOmega ldr cm
²
. The figure-of-merit (V
_B

²
/R
_ON
) of the fabricated device has reached 62 MW/cm
²
, which is the highest value among any lateral MOSFETs and is more than ten times higher than the "Si limit".