A physics-based compact model of quantum-mechanical effects for thin cylindrical Si-Nanowire MOSFETs

Since we know that quantum-mechanical effects are predominant in surrounding-gate MOSFETs, a model should be developed. For the first time, this paper presents an analytic model of quantization for thin cylindrical Si-Nanowire MOSFETs by using a variational approach. The model is implemented into a surface potential like model. It is shown that results agree with the numerical simulations.