Ge shallow junction formation by As implantation and flash lamp annealing

Shallow, about 20 nm, depth n
⁺
/p junction of Ge was successfully fabricated by As
⁺
implantation and FLA. Since the junction depth was limited by implantation energy, much shallower junction would be fabricated by reducing the energy. High potential of arsenic as a dopant was clearly demonstrated, although FLA parameters were not optimized yet. Since SPE retardation was found in the specimens with PAI, other channeling suppression technique should be found.