TAC-IGBT: An improved IGBT structure

An improved trench insulated gate bipolar transistors (TIGBT), called the trench accumulation layer controlled insulated gate bipolar transistor (TAC-IGBT) is proposed. In this new device, the P base of the conventional TIGBT (CT-IGBT) is completely removed, an accumulation channel is incorporated. Numerical simulation results indicate that the structure has lower on-state voltage drop, larger latching current density and smaller gate charge. At the condition of the collector current is 5.0 times 10
^-5
A/mum, the on-state voltage drop of the TAC-IGBT is 0.5 V lower than the CT-IGBT structure. The latching current density increases nearly one order of magnitude. The gate charge needed for the TAC-IGBT is less than 1/3 of the CT-IGBT structure. Furthermore, the TAC-IGBT is more simple and cheaper for fabrication.