Quantifying yield impact of polishing induced defect on the silicon surface

The impact of PIDs on device yield was evaluated by detecting PIDs and performing a correlation analysis between the PID detection results and device yield of a probing test. It was consequently confirmed that PID can be detected sensitively with suitable wafer-surface inspection and SEM tools. It was also confirmed that PID correlates with device yield and that gate-dielectric defects are caused by PIDs. It is concluded that the PID is key factor in improving device yield, and we showed superior detection technology of PID.