Self-isolated and high performance complementary lateral DMOSFETs with surrounding-body regions

This paper reports on self-isolated complementary Lateral DMOSFETs (LDMOSFETs) with Surrounding-Body regions (SE regions). They are fully compatible with 3 V CMOS, lateral NPN and lateral PNP by using the sub-micron Bi-CDMOS process. The N-channel and P-channel DMOSFETs show breakdown voltages of 87 V and 73 V, and specific on-resistances of 0.124 /spl Omega//spl middot/ mm/sup 2/ and 0/spl middot/315 /spl Omega//spl middot/mm/sup 2/, respectively.