Fabrication procedures and characterization of 6H-SiC MESFETs for use in high temperature electronics

6H-SiC MESFETs with 1 mm gate width and 10 /spl mu/m gate length were manufactured on commercially available production grade 6H-SiC substrates purchased from Cree Research, Inc. While numerous SiC devices such as MESFETs, MOSFETs, thyristors, and diodes have been fabricated and tested, few papers detail processing and testing procedures. A typical processing and testing sequence for a n-channel 6H-SiC MESFET is profiled here, demonstrating stable operation from 25/spl deg/C to 250/spl deg/C with small-signal voltage gain of 150 V/V. Operation up to 400/spl deg/C was observed with degraded output characteristics.