Fully depleted 0.25 /spl mu/m MOSFETs on SOS, SIMOX and BSOI substrates

We present the first comparison of 0.25 /spl mu/m nMOSFET devices fabricated on SOS, SIMOX and BSOI substrates with a fully depleted (FD) device design for low power analog and digital applications. All the substrates were processed nearly identically during device fabrication. SOI and SOS materials issues. Si thickness uniformity, device results, back-channel leakage and self heating are discussed.