On designing of 4-valued memory with double-gate TFT

We propose and analyze a new 4 valued memory cell by using the double gate thin film transistor (TFT). First, the structure of the double gate TFT is introduced. An equivalent circuit of the double gate TFT is proposed for the HSPICE simulation. Two circuits which are composed of the resistor load and the CMOS load basic block circuit are proposed and analyzed. The simulation results by using a laboratory 5 /spl mu/m technology show that the memory cell circuits use only 10 transistors, as compared to 12 transistors of a conventional 2 bit memory cell, but can store a higher density of information.