A new semidistributed model for the noise and scattering parameters of the M(H)MIC FETs

This paper describes a rigorous and systematic procedure to derive a unified distributed FET (MESFET, HEMT) signal and noise model at centimeter and millimeter-wave frequencies that can easily be implemented in CAD routines of simulators. We have used the three coupled-line theory and for the first time, the experimental data of the device are compared with the full three coupled-line theory and three coupled-line sliced model. The original noise study using the three coupled-line theory is presented. The procedure was used for the complete small-signal characterisation of a submicrometer-gate GaAs NE710 transistor.