Poly emitter bipolar transistor optimization for an advanced BiCMOS technology

Two approaches involving phosphorus- and arsenic-doped poly emitters for bipolar device optimization in a 1 mu m BiCMOS process are reported. An evaluation includes a comparison of process and device parameters for the two emitter types in the context of a junction-isolated process. The impact of device optimization as measured by ECL and BiCMOS ring oscillators and a BiCMOS 256 K SRAM is discussed. Finally, the reliability of phosphorus and arsenic poly emitters, in terms of beta degradation due to reverse biasing of the emitter-base junction, is presented.<
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