A 128/spl times/128 pixel CMOS area image sensor with multiplexed pixel level A/D conversion

A 128/spl times/128 pixel CMOS area image sensor with a sigma-delta A/D Converter shared within each group of 2/spl times/2 pixels is described. Each pixel comprises a photodiode and 4 MOSFETs and occupies 20.8 /spl mu/m/spl times/19.8 /spl mu/m with a fill factor of 30% in a 0.8 /spl mu/m three layer metal one layer poly CMOS process. At 3.3 V, the dynamic range is >83 dB, the dissipation is <1 mW and the fixed pattern noise is /spl ap/1%.