TFSOI complementary BiCMOS technology for low power RF mixed-mode applications

A Thin-Film-Silicon-On-Insulator Complementary BiCMOS technology has been developed for low power applications. The technology is based on a manufacturable, near-fully-depleted 0.5 /spl mu/m CMOS process with the lateral bipolar device integrated as a drop-in module for CBiCMOS circuits. Excellent low power performance is demonstrated through low current ECL and low voltage CMOS circuits. For the first time, good RF and analog performance of a TFSOI (C)BiCMOS technology is demonstrated. Device gain, noise figure, 1/F noise and matching characteristics comparable to bulk BiCMOS technologies are achieved.