A bipolar ECL static RAM with polysilicon diode loaded memory cell using single poly technology

A 1 K*1 bipolar emitter coupled logic (ECL) static random access memory (RAM) using a polysilicon diode loaded memory cell is realised in a single poly bipolar process technology. The use of the polysilicon diode as the load element for the memory cell is made possible by the fact that its I-V characteristics exhibit an ideality factor of two. The hold voltage for the memory cell is larger than 240 mV over a wide range of cell currents with the lower bound residing in the sub- mu A range. Results show extremely stable operation against row select sensitivity. A 1.5-ns row address access time has been obtained from the test circuit.<
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