Fabrication of SOI structures by uniform zone melting recrystallization for high voltage ICs

We present new experimental results about a method for creating thick silicon films on localized buried oxide layers, by superficial melting and solidification using a bank of tungsten halogen lamps. The purpose of this technique is to obtain cost-effective "partially SOI" substrates for high voltage smart power applications. Chemical defect revelation has been carried out in the SOI and seeded regions. N-channel MOSFETs have also been fabricated. It appears that crystallographic and electrical quality is sufficient for device processing.