A fully resurfed, BiCMOS-compatible, high voltage MOS transistor

In this paper a fully resurfed, high voltage MOS structure compatible with submicron BiCMOS technology is proposed and implemented. The device is junction-isolated and is therefore suitable for high-side drive applications. Using this structure, the resurf condition in the device can be optimized without altering the well regions. Devices with breakdown voltages over 200 V and specific on-resistances on the order of 20 m/spl Omega//spl middot/cm/sup 2/ were obtained.