High-temperature performance of SOI and bulk-silicon RESURF LDMOS transistors

High-temperature off-state and on-state characteristics of bulk-Si and thin-SOI RESURF LDMOS transistors were studied experimentally and theoretically. The off-state leakage current in the SOI devices was only 1.5 nA//spl mu/m at 300/spl deg/C. The increase of on-resistance with temperature in the SOI devices is smaller than in the bulk-Si devices because of the heavier doping dictated by the RESURF principle. The reverse recovery time of the SOI device shows only slight temperature dependence. The results of this study indicate that LDMOS transistors fabricated in thin SOI layers are well suited for high-temperature power IC applications.