Physics-Based Simulation of Carrier Velocity in 2-Dimensional P-Type MOSFET

The carrier velocity for 2-dimensional (2-D) p-type nanostructure was simulated in this paper. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0. The carrier concentration calculation for 2-D, based on the Fermi-Dirac statistic on the order of zero (F
₀
), was applied to obtain the intrinsic velocity of carrier, in the term of thermal velocity v
_th
. The results for 2-D carrier velocity were modeled and simulated, and the comparison for degenerate and non-degenerate regime is presented for various temperature and concentration. It is revealed that the velocity is strongly dependent on concentration and becomes independent of temperature at high concentration.