A simplified 2-D analytic model for the threshold-voltage of fully depleted short gate-length Si-SOI MESFET's

We present a simplified form of the exact solution of the 2-D Poisson equation of fully depleted Si-SOI MESFET's by Hou and Wu (1995). The major improvement is that the Fourier coefficient of the electric displacement at the Si-SiO/sub 2/ interface is given in (finite) closed form, rather than infinite series. Their 2-D analytic model for the threshold-voltage can be simplified accordingly.